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LK-MAMPD-4 Abiadura Handiko Anplifikatutako Mikrouhin Fotodetektagailua
- Abiadura Handia, Banda Zabalera Zabala
- Bias-T integratua
- O/E Hibrido Integratua
- Irabazi Handia, Zarata Baxua, Banda Zabala
- Hermetikoki itxita, SMA konektorea
- Iluntasun-korronte baxua, seinale-zarata erlazio altua.
- Forma-faktore txikia.
Produktuaren Deskribapena
LK-MAMPD-4 is a state-of-the-art optoelectronic hybrid system, integrating a broadband Indium Gallium Arsenide (InGaAs) photodiode with a low-noise amplifier. This photodiode is characterized by a spectral response wavelength range from 1000 to 1650 nanometers. The low-noise amplifier within the system offers a Radio Frequency (RF) gain of 15 decibels, ensuring signal integrity and amplification.
LK-MAMPD-4 is capable of providing bandwidths of 12 gigahertz and 18 gigahertz, catering to a variety of high-speed communication and detection requirements. The module is designed to operate on a +5-volt supply voltage, which is standard in many electronic systems. It is compatible with standard single-mode 9/125-micrometer optical fibers, ensuring seamless integration with existing fiber optic networks. The RF output port features an SMP-compatible connector, which is impedance-matched to 50 ohms for optimal signal transmission and minimal signal loss.
LK-MAMPD-4 is constructed with a hermetic sealing process, which provides robust protection against environmental factors, enhancing its durability and reliability. It has a compact form factor, weighing in at less than 62 grams, which is advantageous for applications where weight is a consideration. The module is certified to comply with the Restriction of Hazardous Substances (RoHS) Directive 2.0, confirming its adherence to stringent environmental and safety standards.
Ezaugarri teknikoak
| Tipikoa eta Absolutua Gehienezko Balorazioa | ||||
|---|---|---|---|---|
| Parametroa | Sym. | Typ | Balorazioa | Unitatea |
| Biltegirako tenperatura-tartea | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Funtzionamendu-kaxa tenperatura-tartea | TC | 25 | -40 ～ +85 | ℃ |
| Alborapen-tentsioa | VR | +5 | +5 ～ +9 | V |
| Sarrerako potentzia optikoa | Pin | 0 | + 10 | dBm |
| Erredura-potentzia optikoa | PB | - | + 13 | dBm |
| Berun soldadura tenperatura | Tp | 280 (10 s) | 330 (10 s) | ℃ |
| Ezaugarri elektriko/optikoak (TC = 22 ± 3 ℃) | ||||||
|---|---|---|---|---|---|---|
| Parametroa | ikur | Probaren egoera | Parametroen balioak | Unitatea | ||
| Uhin-luzeraren barrutia | λ | - | 1000 ~ 1650 | nm | ||
| Maiztasun-tartea | - | - | X-Banda | Ku-Banda | - | |
| Seinale txikiko banda-zabalera | f-3dB | TC = 22 ± 3 ℃ | 0.3 ~ 12 | 2 ~ 18 | GHz | |
| Erantzukizuna | Re | VR =+5V, Pin =10mW | λ = 1310 nm | ≥ 0.8 | ≥ 0.85 | A / W |
| λ = 1550 nm | ≥ 0.85 | ≥ 0.8 | ||||
| Anplitudearen lautasuna | A | TC =-45～+85 ℃ | ≤ ± 2 | dB | ||
| Saturazio-potentzia optikoa | Ps | VR =+ 5 V, λ = 1550 nm AC modulatua |
10 | dBm | ||
| RF seinalearen irabazia (tipikoa) | G | - | 15 ± 1 | dB | ||
| Saturazio RF irteerako potentzia | Pout | - | +3 | dBm | ||
| Irteera VSWR | VSWR | - | ≤ 2 | - | ||
| Irteera inpedantzia | RL | - | 50 | Ω | ||
● Erantzun-kurba tipikoak
(1. irudia X bandako fotodetektagailuaren maiztasun-erantzuna)
(2. irudia: Ku bandako fotodetektagailuaren maiztasun-erantzuna)
● Dimentsioak eta pinak (unitatea: mm [hazbete])
RF Connector：SMP
● Eskaera-informazioa
1. orria:
| kodea | Banda-zabalera analogikoa |
| X | 0.2 ～ 12 GHz |
| Ku | 2 ～ 18 GHz |
2. orria:
| kodea | Connector Mota | Komentarioen |
| N | Konektorerik ez | 9 / 125 μm-ko zuntz-buztana modu bakarrekoa |
| A | FC / APC | |
| P | FC / PC |
● Neurriak
Zuntzaren tolestura-erradioa gutxienez 20 mm-koa da, zuntza kaltetzea saihesteko.
Ziurtatu zuntz akoplamenduaren alderdia garbi dagoela optozirkuitura konektatu aurretik.
ESD babes egokia beharrezkoa da biltegiratzean, garraioan eta erabileran.
Gure fotodetektagailu estandar guztiak modulutan pertsonaliza daitezke!
aplikazioak
Radar Informazioaren Prozesamendua
Gerra Elektronikoa
Antena Neurketa
Zuntz optikoko komunikazioak
Segurtasuna eta Zaintza
